Drain current response delay of FD-SOI MOSFETs in RF operation
نویسندگان
چکیده
We investigated the frequency dependences of Y22 of FDSOI MOSFETs, in which the drain current response delay is observed for the first time. Short channel FD-SOI devices operating in linear region show significant drain current response delay. It is confirmed that FD-SOI MOSFET’s RF behavior can be well reproduced with the proposed model including the drain current response delay.
منابع مشابه
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ورودعنوان ژورنال:
- IEICE Electronic Express
دوره 1 شماره
صفحات -
تاریخ انتشار 2004